Datasheet Details
- Part number
- HM05P35MR
- Manufacturer
- H&M Semiconductor
- File Size
- 1.11 MB
- Datasheet
- HM05P35MR-HMSemiconductor.pdf
- Description
- -350V P-Channel Enhancement Mode MOSFET
HM05P35MR Description
HM05P35MR -350V P-Channel Enhancement Mode MOSFET .
The HM05P35MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
HM05P35MR Applications
* , should be limited by total power dissipation. -ID Drain Current (A)
Typical Characteristics
1.2 0.9 0.6 0.3
HM05P35MR
-350V P-Channel Enhancement Mode MOSFET
VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V
VGS=-3V
RD S O (N m Ω )
550
ID= 0 . 5 A
540
530
520
510
0.0 0
-V0D. S25,Drain-to-S0o.5urce
0.75
V
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