Datasheet Details
- Part number
- HM07DP10D
- Manufacturer
- H&M Semiconductor
- File Size
- 607.57 KB
- Datasheet
- HM07DP10D-HMSemiconductor.pdf
- Description
- P-Channel Enhancement Mode Field Effect Transistor
HM07DP10D Description
HM07DP10D P-Channel Enhancement Mode Field Effect Transistor ')1;/ Product Summary * VDS * ID * RDS(ON)( at VGS= -4.5V) * RDS(O.
Trench Power MV MOSFET technology.
High density cell design for Low RDS(ON).
High Speed switching
Applications.
Battery protecti.
HM07DP10D Applications
* Battery protection
* Load switch
* Power management
* Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source Voltage
VDS
-20
V
Gate-source Voltage Drain Current B Drain Current B Pulsed Drain Current A
TA=25℃ @ Steady State
TA=
📁 Related Datasheet
📌 All Tags
HM07DP10D Stock/Price