HM07DP10D P-Channel Enhancement Mode Field Effect Transistor

H&M Semiconductor

Description

HM07DP10D P-Channel Enhancement Mode Field Effect Transistor ')1;/ Product Summary * VDS * ID * RDS(ON)( at VGS= -4.5V) * RDS(O.
Trench Power MV MOSFET technology. High density cell design for Low RDS(ON). High Speed switching Applications. Battery protecti.

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Datasheet Specifications

Part number: HM07DP10D
Manufacturer: H&M Semiconductor
File Size: 607.57 KB
Datasheet: HM07DP10D-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Applications

* Battery protection
* Load switch
* Power management
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -20 V Gate-source Voltage Drain Current B Drain Current B Pulsed Drain Current A TA=25℃ @ Steady State TA=

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HM07DP10D P-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor

H&M Semiconductor HM07DP10D-like datasheet