HM06N15MR - 150V N-Channel Enhancement Mode MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM06N15MR
Manufacturer	H&M Semiconductor
File Size	961.47 KB
Description	150V N-Channel Enhancement Mode MOSFET
Datasheet	HM06N15MR-HMSemiconductor.pdf

The HM06N15MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS = 150V,ID =0.6A RDS(ON) < 880mΩ @ VGS=10V (Typ:700mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation.

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Published: Jun 30, 2025 |