Part number:
HM10SDN10D
Manufacturer:
H&M Semiconductor
File Size:
819.61 KB
Description:
100v half bridge dual n-channel super trench power mosfet.
The HM10SDN10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
It includes two specialized MOSFETs in a dua
HM10SDN10D Features
* Q1 "High Side" MOSFET Q2 "Low Side" MOSFET
* VDS =0V,ID = 0A VDS =0V,ID =10A RDS(ON)
HM10SDN10D-HMSemiconductor.pdf
Datasheet Details
HM10SDN10D
H&M Semiconductor
819.61 KB
100v half bridge dual n-channel super trench power mosfet.
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