HM10SDN10D Datasheet - H&M Semiconductor

HM10SDN10D - 100V Half Bridge Dual N-Channel Super Trench Power MOSFET

The HM10SDN10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

It includes two specialized MOSFETs in a dua

HM10SDN10D Features

* Q1 "High Side" MOSFET Q2 "Low Side" MOSFET

* VDS =0V,ID = 0A VDS =0V,ID =10A RDS(ON)

Datasheet Details

HM10SDN10D

H&M Semiconductor

819.61 KB

100v half bridge dual n-channel super trench power mosfet.

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