HM16N60F - N-channel Enhanced VDMOSFET

H&M Semiconductor

HM16N60F Datasheet Preview — Preview of HM16N60F PDF

Datasheet Details

Part number	HM16N60F
Manufacturer	H&M Semiconductor
File Size	420.64 KB
Description	N-channel Enhanced VDMOSFET
Datasheet	HM16N60F-HMSemiconductor.pdf

HM16N60F Product details

Description

HM16N60F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 1, 2025 |