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HM16N60F Datasheet - H&M Semiconductor

HM16N60F - N-channel Enhanced VDMOSFET

HM16N60F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and

HM16N60F Features

* l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Par

HM16N60F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM16N60F

Manufacturer:

H&M Semiconductor

File Size:

420.64 KB

Description:

N-channel enhanced vdmosfet.

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