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HM16N60F Datasheet - H&M Semiconductor

HM16N60F N-channel Enhanced VDMOSFET

HM16N60F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and .

HM16N60F Features

* l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par

HM16N60F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM16N60F

Manufacturer:

H&M Semiconductor

File Size:

420.64 KB

Description:

N-channel enhanced vdmosfet.

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HM16N60F HM16N60F N-channel Enhanced VDMOSFET H&M Semiconductor

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