Part number:
HM16N60F
Manufacturer:
H&M Semiconductor
File Size:
420.64 KB
Description:
N-channel enhanced vdmosfet.
Datasheet Details
HM16N60F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and
HM16N60F Features
* l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par
Datasheet Details
HM16N60F
H&M Semiconductor
420.64 KB
N-channel enhanced vdmosfet.
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