HM2301F Datasheet, Mosfet, H&M Semiconductor

PDF File Details

Part number:

HM2301F

Manufacturer:

H&M Semiconductor

File Size:

521.88kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

TAGS

HM2301F

H&M Semiconductor

📁 Related Datasheet

HM2301 - Digital-output humidity and temperature sensor (Hanwei)
  HM2301 Digital-output humidity and temperature sensor                          Data sheet HM2301 Digital-output humidity and temperature sensor F.

HM2301A - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2301B - P-Channel Trench Power MOSFET (H&M Semiconductor)
HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2301BJR - P-Channel MOSFET (H&M Semiconductor)
Description The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary .

HM2301BKR - P-Channel 20V (D-S) MOSFET (H&M Semiconductor)
HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are pro.

HM2301BSR - P-Channel 20V (D-S) MOSFET (H&M Semiconductor)
HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are pro.

HM2301D - P-Channel 20V (D-S) MOSFET (H&M Semiconductor)
H3 * P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The +0 ' is the P-Channel logic enhancement mode power field effect transistors are produce.

HM2301DR - P-Channel 20V (D-S) MOSFET (H&M Semiconductor)
H3 *8 P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The +0 '5 is the P-Channel logic enhancement mode power field effect transistors are produ.

HM2301KR - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope.

HM2300 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2300 N-Channel Enhancement Mode Power MOSFET Description The HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.