Datasheet Details
- Part number
- HM2301F
- Manufacturer
- H&M Semiconductor
- File Size
- 521.88 KB
- Datasheet
- HM2301F-HMSemiconductor.pdf
- Description
- P-Channel Enhancement Mode Power MOSFET
HM2301F Description
HM2301F P-Channel Enhancement Mode Power MOSFET .
The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
HM2301F Features
* VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired
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