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HM2301F Datasheet - H&M Semiconductor

HM2301F, P-Channel Enhancement Mode Power MOSFET

HM2301F P-Channel Enhancement Mode Power MOSFET .
The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

Features

* VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired

HM2301F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM2301F

Manufacturer:

H&M Semiconductor

File Size:

521.88 KB

Description:

P-Channel Enhancement Mode Power MOSFET

HM2301F Distributors

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📌 All Tags

HM2301F P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM2301F-like datasheet
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