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HM2301F - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2301F P-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2301F

Datasheet Details

Part number	HM2301F
Manufacturer	H&M Semiconductor
File Size	521.88 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2301F Datasheet
Additional preview pages of the HM2301F datasheet.

Product details

Description

The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

Features

VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Nov 27, 2018 |