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HM2301G - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM2301G
Manufacturer	H&M Semiconductor
File Size	428.61 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2301G-HMSemiconductor.pdf

HM2301G Product details

Description

The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -20V,ID = -2A RDS(ON) < 10mΩ @ VGS=-2.5V RDS(ON) < 10mΩ @ VGS=-4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram Marking and pin Assignment.

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Published: Jun 22, 2025 |