HM2301G P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM * P-Channel Enhancement Mode Power MOSFET .
The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

📥 Download Datasheet

HM2301G Datasheet Preview — Preview of HM2301G PDF

Datasheet Specifications

Part number: HM2301G
Manufacturer: H&M Semiconductor
File Size: 428.61 KB
Datasheet: HM2301G-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = -2A RDS(ON) < 10mΩ @ VGS=-2.5V RDS(ON) < 10mΩ @ VGS=-4.5V
* High Power and current handing capability
* Lead free product is acquired

HM2301G Distributors

📁 Related Datasheet

HM2302 HM2309 HM2310 HM236WU1-100 HM236WU1-300 HM236WU1-400

📌 All Tags

HM2301G P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2301G-like datasheet