HM2301KR - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM2301KR
Manufacturer	H&M Semiconductor
File Size	643.08 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2301KR-HMSemiconductor.pdf

The HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V D G S Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Marking and pin Assignment.

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Published: Nov 27, 2018 |