HM2319 - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM2319 Description

HM2319 P-Channel Enhancement Mode Power MOSFET .
The HM2319 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection appli.

HM2319 Features

* VDS = -40V,ID = -A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

HM2319 Datasheet Preview — Preview of HM2319 PDF

Datasheet Details

Part number: HM2319
Manufacturer: H&M Semiconductor
File Size: 317.46 KB
Datasheet: HM2319-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

HM2301 - Digital-output humidity and temperature sensor (Hanwei)
HM2302 - Digital temperature and humidity sensor (ETC)
HM2309 - P-Channel 60V MOSFET (VBsemi)
HM236WU1-100 - TFT LCD (BOE)
HM236WU1-300 - TFT LCD (BOE)
HM236WU1-400 - TFT LCD (BOE)
HM236WU3-100 - TFT LCD (BOE)
HM236WU3-110 - TFT LCD (BOE)

📌 All Tags

P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2319-like datasheet

HM2319A - P-Channel Enhancement Mode Power MOSFET
HM2319D - P-Channel Enhancement Mode Power MOSFET
HM2319PR - P-Channel Enhancement Mode Power MOSFET
HM2310 - N-Channel Enhancement Mode Power MOSFET
HM2310B - N-Channel Enhancement Mode Power MOSFET
HM2310C - N-Channel Enhancement Mode Power MOSFET