HM250N03A - N-Channel Enhancement Mode Power MOSFET
HM250N03A Features
* VDS =30V ,ID =250A RDS(ON) = 0.9mΩ (Typ) @ VGS=10V RDS(ON) = 1.8mΩ (Typ) @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
