HM250N03A - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM250N03A
Manufacturer	H&M Semiconductor
File Size	1.12 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM250N03A-HMSemiconductor.pdf

The HM250N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =30V ,ID =250A RDS(ON) = 0.9mΩ (Typ) @ VGS=10V RDS(ON) = 1.8mΩ (Typ) @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 22, 2025 |