Part number:
HM20N60A
Manufacturer:
H&M semi
File Size:
520.27 KB
Description:
N-channel mosfet.
VDSS 600 HM20N60A, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 250 RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various po
HM20N60A Features
* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Para
Datasheet Details
HM20N60A
H&M semi
520.27 KB
N-channel mosfet.
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