HM20N65F - N-channel Enhanced VDMOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM20N65F
Manufacturer	H&M Semiconductor
File Size	452.91 KB
Description	N-channel Enhanced VDMOSFET
Datasheet	HM20N65F Datasheet
Additional preview pages of the HM20N65F datasheet.

Product details

Description

HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard..

Features

Fast Switching.
Low ON Resistance(Rdson≤0.5Ω).
Low Gate Charge (Typical Data:65nC).
Low Reverse transfer capacitances(Typical: 20pF).
100% Single Pulse avalanche energy Test.

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Published: Jul 1, 2025 |