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HM20N65F Datasheet - H&M Semiconductor

HM20N65F - N-channel Enhanced VDMOSFET

HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and

HM20N65F Features

* Fast Switching

* Low ON Resistance(Rdson≤0.5Ω)

* Low Gate Charge (Typical Data:65nC)

* Low Reverse transfer capacitances(Typical: 20pF)

* 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise s

HM20N65F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM20N65F

Manufacturer:

H&M Semiconductor

File Size:

452.91 KB

Description:

N-channel enhanced vdmosfet.

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