Datasheet Details
- Part number
- HM20N65F
- Manufacturer
- H&M Semiconductor
- File Size
- 452.91 KB
- Datasheet
- HM20N65F-HMSemiconductor.pdf
- Description
- N-channel Enhanced VDMOSFET
HM20N65F Description
+01) General .
HM20N65F, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve sw.
HM20N65F Features
* Fast Switching
* Low ON Resistance(Rdson≤0.5Ω)
* Low Gate Charge (Typical Data:65nC)
* Low Reverse transfer capacitances(Typical: 20pF)
HM20N65F Applications
* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Vol
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