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HM20N65F Datasheet - H&M Semiconductor

HM20N65F, N-channel Enhanced VDMOSFET

+01) General .
HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve sw.
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HM20N65F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM20N65F

Manufacturer:

H&M Semiconductor

File Size:

452.91 KB

Description:

N-channel Enhanced VDMOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤0.5Ω)
* Low Gate Charge (Typical Data:65nC)
* Low Reverse transfer capacitances(Typical: 20pF)

Applications

* Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Vol

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