HM20N65F Datasheet - H&M Semiconductor

HM20N65F N-channel Enhanced VDMOSFET

HM20N65F, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and .

HM20N65F Features

* Fast Switching

* Low ON Resistance(Rdson≤0.5Ω)

* Low Gate Charge (Typical Data:65nC)

* Low Reverse transfer capacitances(Typical: 20pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise s

HM20N65F-HMSemiconductor.pdf