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HM25N08D Datasheet - H&M Semiconductor

HM25N08D, N-Channel Enhancement Mode Power MOSFET

HM25N08D N-Channel Enhancement Mode Power MOSFET .
The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
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HM25N08D-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM25N08D

Manufacturer:

H&M Semiconductor

File Size:

513.02 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS =80V,ID =25A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology

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