HM25N08D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM25N08D N-Channel Enhancement Mode Power MOSFET .
The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM25N08D
Manufacturer: H&M Semiconductor
File Size: 513.02 KB
Datasheet: HM25N08D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =80V,ID =25A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology

HM25N08D Distributors

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HM25N08D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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