HM25N06Q MOSFET

H&M Semiconductor

Description

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The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM25N06Q
Manufacturer: H&M Semiconductor
File Size: 550.11 KB
Datasheet: HM25N06Q-HMSemiconductor.pdf
Description: MOSFET

Features

* VDS >60V,ID =25A RDS(ON) < 20mΩ @ VGS=10V （Typ:18mΩ）
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM25N06Q Distributors

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HM25N06Q MOSFET H&M Semiconductor

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