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HM25N06Q Datasheet - H&M Semiconductor

HM25N06Q - MOSFET

HM25N06Q Features

* VDS >60V,ID =25A RDS(ON) < 20mΩ @ VGS=10V (Typ:18mΩ)

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Low gate to drain charge to reduce switching losses Application

* Power switching application

* Hard switched and hig

HM25N06Q-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM25N06Q

Manufacturer:

H&M Semiconductor

File Size:

550.11 KB

Description:

Mosfet.

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