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HM25N06Q - MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM25N06Q
Manufacturer	H&M Semiconductor
File Size	550.11 KB
Description	MOSFET
Datasheet	HM25N06Q-HMSemiconductor.pdf

HM25N06Q Product details

Description

The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS >60V,ID =25A RDS(ON) < 20mΩ @ VGS=10V （Typ:18mΩ）.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses.

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Published: Jul 1, 2025 |