Datasheet4U Logo Datasheet4U.com

HM3306 - N-Channel MOSFET

📥 Download Datasheet

Preview of HM3306 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HM3306
Manufacturer
H&M Semiconductor
File Size
800.92 KB
Datasheet
HM3306-HMSemiconductor.pdf
Description
N-Channel MOSFET

HM3306 Product details

Description

HM330 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM330 Device HM330 Device Package TO-220-3L Reel Size - Tape width - Page 1 Quantity - Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min.Typ Max.Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA 60 V IDSS Zero Gate Voltage Drain Current VDS=48V,VGS=0V TJ=85°C VGS(th) Gate Thr

Features

📁 Related Datasheet

  • HM3305 - N-Channel Enhancement Mode Power MOSFET (H&M semi)
  • HM3307B - N-Channel MOSFET (H&M semi)
  • HM338 - Photo Module Infrared receiver (GOOD TAKE)
  • HM338R-LL-W - Photo Module Infrared receiver (GOOD TAKE)
  • HM338RLL-W - Photo Module Infrared receiver (GOOD TAKE)
  • HM3-6514-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM3-6514B-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM3-6514S-9 - 1024 x 4 CMOS RAM (Intersil Corporation)

📌 All Tags

H&M Semiconductor HM3306-like datasheet

HM3306 Stock/Price