HM3413B

P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Part number:

HM3413B

Manufacturer:

H&M Semiconductor

File Size:

426.03 KB

Description:

P-channel enhancement mode power mosfet.
HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3413B uses advanced trench techno.
The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operat.

✔ HM3413B Features

VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount

✔ HM3413B Application

GENERAL FEATURES
VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
High Power

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HM3413B P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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✔ HM3413B Features

✔ HM3413B Application

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