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HM3413B Datasheet - H&M Semiconductor

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HM3413B P-Channel Enhancement Mode Power MOSFET

HM3413B P-Channel Enhancement Mode Power MOSFET .
The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM3413B-HMSemiconductor.pdf

Preview of HM3413B PDF

Datasheet Details

Part number:

HM3413B

Manufacturer:

H&M Semiconductor

File Size:

426.03 KB

Description:

P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
* High Power and current handing capability
* Lead free product is acquired

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