HM3415E P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM3415E P-Channel Enhancement Mode Power MOSFET .
The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.

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Datasheet Specifications

Part number: HM3415E
Manufacturer: H&M Semiconductor
File Size: 482.37 KB
Datasheet: HM3415E-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
* High Power and current handing capability
* Lead free product is acquired

HM3415E Distributors

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HM3415E P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3415E-like datasheet