HM3416B

N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number:

HM3416B

Manufacturer:

H&M Semiconductor

File Size:

593.76 KB

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Description:

N-channel enhancement mode power mosfet.
HM3416B N-Channel Enhancement Mode Power MOSFET Description The HM3416B uses advanced trench techno.
The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operat.

✔ HM3416B Features

VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired

✔ HM3416B Application

.It is ESD protested. General Features
VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.

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HM3416B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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