* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D AEZE-
* SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Ma
HM3416E
H&M Semiconductor
259.16 KB
N-channel enhancement mode power mosfet.
20V N-Channel Enhancement-Mode MOSFET 20V N MOS HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.8 A .
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