HM3416E - N-Channel Enhancement Mode Power MOSFET
HM3416E Features
* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D AEZE-
* SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Ma
