HM3422 Datasheet, MOSFET, H&M Semiconductor

HM3422 Features

  • Mosfet
  • VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surfa

PDF File Details

Part number:

HM3422

Manufacturer:

H&M Semiconductor

File Size:

421.02kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The HM3422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2

Datasheet Preview: HM3422 📥 Download PDF (421.02kb)
Page 2 of HM3422 Page 3 of HM3422

TAGS

HM3422
N-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

📁 Related Datasheet

HM3420 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
+0  GENERATION DESCRIPTION The HM3420 is a high-efficiency, DC-to-DC step-down switching regulators, capable of delivering up to 2A of output curr.

HM3420B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
 Features  1.5MHz Constant Frequency Operation  No Schottky Diode Required  Low Dropout Operation:100% Duty Cycle  PFM Mode for High Efficiency i.

HM3421 - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM3421 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3421 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM3421B - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM3421B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3421B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM3422A - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM $ N Channel Enhancement Mode MOSFET DESCRIPTION The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced .

HM3400 - Synchronous Boost DC/DC Regulator (H&M Semiconductor)
HM3400 Synchronous Boost DC/DC Regulator HM3400 Features Description z Up to 96% Efficiency z Low voltage start-up:0.9V z Shut-down current: < 1µA.

HM3400B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
+03400% N-Channel Enhancement Mode Power MOSFET DESCRIPTION The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate char.

HM3400C - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
+0& N-Channel Enhancement Mode Power MOSFET Description The +0& uses advanced trench technology to provide excellent RDS(ON) and low gate c.

HM3400D - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM3400D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400D uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM3400DR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM3400DR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate char.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts