HM35SDN03D 30V Half Bridge Dual N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

HM35SDN03D 30V Half Bridge Dual N-Channel Super Trench Power MOSFET .
The HM35SDN03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HM35SDN03D
Manufacturer: H&M Semiconductor
File Size: 784.49 KB
Datasheet: HM35SDN03D-HMSemiconductor.pdf
Description: 30V Half Bridge Dual N-Channel Super Trench Power MOSFET

Features

* Q1 "High Side" MOSFET
* VDS =30V,ID =35A RDS(ON)

Applications

* 100% UIS TESTED! 100% ∆Vds TESTED! Schematic Diagram pin assignment Top View Bottom View Package Marking and Ordering Information Device Marking Device Device Package HM35SDN03D HM35SDN03D DFN5X6-8L Reel Size 330mm Tape width 12mm Quantity 5000 units Absolute Maximum Ratings (TC=25℃unl

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HM35SDN03D 30V Half Bridge Dual N-Channel Super Trench Power MOSFET H&M Semiconductor

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