HM35SDN03D Datasheet - H&M Semiconductor

HM35SDN03D - 30V Half Bridge Dual N-Channel Super Trench Power MOSFET

The HM35SDN03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

It includes two specialized MOSFETs in a dual

HM35SDN03D Features

* Q1 "High Side" MOSFET

* VDS =30V,ID =35A RDS(ON)

Datasheet Details

HM35SDN03D

H&M Semiconductor

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30v half bridge dual n-channel super trench power mosfet.

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