HM3710 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

+0 N-Channel Enhancement Mode Power MOSFET .
The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

📥 Download Datasheet

HM3710 Datasheet Preview — Preview of HM3710 PDF

Datasheet Specifications

Part number: HM3710
Manufacturer: H&M Semiconductor
File Size: 438.65 KB
Datasheet: HM3710-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) Schematic diagram
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS

HM3710 Distributors

📁 Related Datasheet

HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM3-65764 HM3-65787 HM3-65788

📌 All Tags

HM3710 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3710-like datasheet