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HM3N90F Datasheet - H&M Semiconductor

HM3N90F Silicon N-Channel Power MOSFET

VDSS 900 HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.7 enhance the avalanche energy. The transistor can be used in various power s.

HM3N90F Features

* l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

HM3N90F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM3N90F

Manufacturer:

H&M Semiconductor

File Size:

537.13 KB

Description:

Silicon n-channel power mosfet.

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HM3N90F HM3N90F Silicon N-Channel Power MOSFET H&M Semiconductor

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