Part number:
HM3N90F
Manufacturer:
H&M Semiconductor
File Size:
537.13 KB
Description:
Silicon n-channel power mosfet.
Datasheet Details
VDSS 900 HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30 the conduction loss, improve switching performance and RDS(ON)Typ 4.7 enhance the avalanche energy.
The transistor can be used in various power s
HM3N90F Features
* l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:15nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa
Datasheet Details
HM3N90F
H&M Semiconductor
537.13 KB
Silicon n-channel power mosfet.
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