HM3N90F Silicon N-Channel Power MOSFET

H&M Semiconductor

Description

HM3N90F Silicon N-Channel Power MOSFET General .
VDSS 900 HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 is obtained by the self-aligned planar Technology which reduce PD(TC=25℃) 30.

📥 Download Datasheet

HM3N90F Datasheet Preview — Preview of HM3N90F PDF

Datasheet Specifications

Part number: HM3N90F
Manufacturer: H&M Semiconductor
File Size: 537.13 KB
Datasheet: HM3N90F-HMSemiconductor.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-

HM3N90F Distributors

📁 Related Datasheet

HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM3-65764 HM3-65787 HM3-65788

📌 All Tags

HM3N90F Silicon N-Channel Power MOSFET H&M Semiconductor

H&M Semiconductor HM3N90F-like datasheet