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HM3N90I Datasheet - H&M Semiconductor

HM3N90I Silicon N-Channel Power MOSFET

VDSS 900 HM3N90I, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy. The transistor can be used in various power sw.

HM3N90I Features

* z Fast Switching z Low ON Resistance(Rdson≤5.5Ω) z Low Gate Charge (Typical Data:16nC) z Low Reverse transfer capacitances(Typical:6.5pF) z 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

HM3N90I-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM3N90I

Manufacturer:

H&M Semiconductor

File Size:

792.42 KB

Description:

Silicon n-channel power mosfet.

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HM3N90I HM3N90I Silicon N-Channel Power MOSFET H&M Semiconductor

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