Part number:
HM3N90I
Manufacturer:
H&M Semiconductor
File Size:
792.42 KB
Description:
Silicon n-channel power mosfet.
Datasheet Details
VDSS 900 HM3N90I, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy.
The transistor can be used in various power sw
HM3N90I Features
* z Fast Switching z Low ON Resistance(Rdson≤5.5Ω) z Low Gate Charge (Typical Data:16nC) z Low Reverse transfer capacitances(Typical:6.5pF) z 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol
Datasheet Details
HM3N90I
H&M Semiconductor
792.42 KB
Silicon n-channel power mosfet.
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