HM4611B Datasheet, Mosfet, H&M Semiconductor

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HM4611B

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H&M Semiconductor

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📄 Datasheet

Description:

N & p-channel enhancement mode power mosfet. The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used

✔ HM4611B Features

N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
High power and current handing capability
Lead free

✔ HM4611B Application

General Features
N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
P-Channel VDS = -60V,ID = -6A R

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HM4611B P-Channel Enhancement Mode Power MOSFET H&M Semiconductor