HM4611Q N And P-Channel Enhancement Mode MOSFET

H&M Semiconductor

Description

HM4611Q N And P-Channel Enhancement Mode MOSFET .
Schematic diagram The HM4611Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: HM4611Q
Manufacturer: H&M Semiconductor
File Size: 846.65 KB
Datasheet: HM4611Q-HMSemiconductor.pdf
Description: N And P-Channel Enhancement Mode MOSFET

Features

* N-channel： VDS =60V,ID =10A RDS(ON)=34mΩ (typical) @ VGS=10V RDS(ON)=46mΩ (typical) @ VGS=4.5V P-Channel： VDS =-60V,ID =-10A RDS(ON)=85mΩ (typical) @ VGS=-10V RDS(ON)=135mΩ (typical) @ VGS=-4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)
* 15

HM4611Q Distributors

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HM4611Q And P-Channel Enhancement Mode MOSFET H&M Semiconductor

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