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HM4612 - N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM4612
Manufacturer	H&M Semiconductor
File Size	325.96 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4612-HMSemiconductor.pdf

HM4612 Product details

Features

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions 4612 REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC Parameter Drain-Source Voltage Symbol VDS Ra.

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Published: Nov 27, 2018 |