* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions 4612 REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max.
HM4612
H&M Semiconductor
325.96 KB
N & p-channel enhancement mode power mosfet.
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS HM N-CH VDS= 60V RDS(ON), Vgs@10V, Ids@4.5A = 48mΩ RDS(ON), Vgs@4.5V, Ids@3A = 60mΩ P-.
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