HM4612 N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS HM N-CH VDS= 60V RDS(ON), Vgs@10V, Ids@4.5A = 48mΩ RDS(ON), Vgs@4.5V, Ids@3A = 60mΩ P-.

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Datasheet Specifications

Part number: HM4612
Manufacturer: H&M Semiconductor
File Size: 325.96 KB
Datasheet: HM4612-HMSemiconductor.pdf
Description: N & P-Channel Enhancement Mode Power MOSFET

Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM Package Dimensions 4612 REF. A B C D E F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 REF. M H L J K G Millimeter Min. Max.

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HM4612 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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