HM4616Q N And P-Channel Enhancement Mode MOSFET

H&M Semiconductor

Description

HM4616Q N And P-Channel Enhancement Mode MOSFET .
The HM4616Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: HM4616Q
Manufacturer: H&M Semiconductor
File Size: 871.65 KB
Datasheet: HM4616Q-HMSemiconductor.pdf
Description: N And P-Channel Enhancement Mode MOSFET

Features

* N-channel： VDS =30V,ID =28A RDS(ON)=12mΩ (typical) @ VGS=10V RDS(ON)=14mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V,ID =-18A RDS(ON)=22mΩ (typical) @ VGS=-10V RDS(ON)=30mΩ (typical) @ VGS=-4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)
* 150

HM4616Q Distributors

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HM4616Q And P-Channel Enhancement Mode MOSFET H&M Semiconductor

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