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HM4618SP Datasheet - H&M Semiconductor

HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its.

HM4618SP Features

* VSSS =20V,IS =6A

* 2.5V drive

* Common-drain type

* 2KV HBM Package Information

* Minimum Packing Quantity : 5,000 pcs./reel Application

* Lithium-ion battery charging and discharging switch Equivalent Circuit Marking and pin assignment CSP top view Absolute Maximum Rat

HM4618SP Datasheet (489.95 KB)

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Datasheet Details

Part number:

HM4618SP

Manufacturer:

H&M Semiconductor

File Size:

489.95 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

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HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor

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