HM4618SP Datasheet (H&M Semiconductor) - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

HM4618SP, Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its

HM4618SP Features

* VSSS =20V,IS =6A

* 2.5V drive

* Common-drain type

* 2KV HBM Package Information

* Minimum Packing Quantity : 5,000 pcs./reel Application

* Lithium-ion battery charging and discharging switch Equivalent Circuit Marking and pin assignment CSP top view Absolute Maximum Rat