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HM4622Q N And P-Channel Enhancement Mode MOSFET

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Description

HM4 N And P-Channel Enhancement Mode MOSFET .
The HM4622Q uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number
HM4622Q
Manufacturer
H&M Semiconductor
File Size
805.94 KB
Datasheet
HM4622Q-HMSemiconductor.pdf
Description
N And P-Channel Enhancement Mode MOSFET

Features

* N-channel: VDS =20V,ID =25A RDS(ON)=8.2mΩ (typical) @ VGS=2.5V RDS(ON)=6.2mΩ (typical) @ VGS=4.5V P-Channel: VDS =-20V,ID =-25A RDS(ON)=17.5mΩ (typical) @ VGS=-2.5V RDS(ON)=13mΩ (typical) @ VGS=-4.5V
* Excellent gate charge x RDS(ON) product(FOM)
* Very low on-resistance RDS(ON)

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