HM4606B N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4606B N and P-Channel Enhancement Mode Power MOSFET .
The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: HM4606B
Manufacturer: H&M Semiconductor
File Size: 566.84 KB
Datasheet: HM4606B-HMSemiconductor.pdf
Description: N & P-Channel Enhancement Mode Power MOSFET

Features

* N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
* P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package N-channel P-channel Schematic diagram Marking and pin assignme

HM4606B Distributors

📁 Related Datasheet

HM4-6514-B HM4-6516-9 HM4-65162-9 HM4-65162B-9 HM4-65162C-9 HM4-65642883

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HM4606B P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4606B-like datasheet