HM4606B

N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number:

HM4606B

Manufacturer:

H&M Semiconductor

File Size:

566.84 KB

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Description:

N & p-channel enhancement mode power mosfet.
HM4606B N and P-Channel Enhancement Mode Power MOSFET Description The HM4606B uses advanced trench .
The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The c.

✔ HM4606B Features

N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V
High power and current handing capability
Lead free

✔ HM4606B Application

General Features
N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V
P-Channel VDS = -30V,ID = -7A R

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HM4606B P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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