HM4606D N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4606D N and P-Channel Enhancement Mode Power MOSFET .
The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: HM4606D
Manufacturer: H&M Semiconductor
File Size: 557.10 KB
Datasheet: HM4606D-HMSemiconductor.pdf
Description: N & P-Channel Enhancement Mode Power MOSFET

Features

* N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V RDS(ON) < 36mΩ @ VGS=4.5V
* P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired
* Surface mount pack age N-channel

HM4606D Distributors

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HM4606D P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4606D-like datasheet