HM4606 N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4606 N and P-Channel Enhancement Mode Power MOSFET .
The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: HM4606
Manufacturer: H&M Semiconductor
File Size: 753.77 KB
Datasheet: HM4606-HMSemiconductor.pdf
Description: N & P-Channel Enhancement Mode Power MOSFET

Features

* N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V
* P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired
* Surface mount package N-channel

HM4606 Distributors

📁 Related Datasheet

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HM4606 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4606-like datasheet