HM4606C N & P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4606C N and P-Channel Enhancement Mode Power MOSFET .
The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

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Datasheet Specifications

Part number: HM4606C
Manufacturer: H&M Semiconductor
File Size: 866.65 KB
Datasheet: HM4606C-HMSemiconductor.pdf
Description: N & P-Channel Enhancement Mode Power MOSFET

Features

* N-Channel VDS = 20V,ID =5.0A RDS(ON) < 59mΩ @ VGS=10V RDS(ON) < 45mΩ @ VGS=4.5V
* P-Channel VDS = -20V,ID = -4.0A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 110mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired
* Surface mount pack age N-chann

HM4606C Distributors

📁 Related Datasheet

HM4-6514-B HM4-6516-9 HM4-65162-9 HM4-65162B-9 HM4-65162C-9 HM4-65642883

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HM4606C P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4606C-like datasheet