HM4830 Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4830 Dual N-Channel Enhancement Mode Power MOSFET .
The HM4830 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM4830
Manufacturer: H&M Semiconductor
File Size: 461.59 KB
Datasheet: HM4830-HMSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =18A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V Schematic diagram
* High density cell design for ultra low Rdson

HM4830 Distributors

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HM4830 Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4830-like datasheet