Datasheet4U Logo Datasheet4U.com

HM4850 - Dual N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM4850 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =40V,ID =5.0A RDS(ON) < 40mΩ @ VGS=10V RDS(ON) < 65mΩ @ VGS=4.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

📥 Download Datasheet

Datasheet preview – HM4850

Datasheet Details

Part number HM4850
Manufacturer H&M Semiconductor
File Size 637.72 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4850 Datasheet
Additional preview pages of the HM4850 datasheet.

📁 Similar Datasheet

  • HM4806 - Dual N-Channel MOSFET (H&M semi)
  • HM4828 - Dual N-Channel 60V MOSFET (VBsemi)
  • HM48416AP - 16384 word x 4 Bit Dynamic RAM (Hitachi)
  • HM48416AP-12 - 16384 word x 4 Bit Dynamic RAM (Hitachi)
  • HM48416AP-15 - 16384 word x 4 Bit Dynamic RAM (Hitachi)
  • HM48416AP-20 - 16384 word x 4 Bit Dynamic RAM (Hitachi)
  • HM4864-2 - (HM4864x-x) 65536 x 1-Bit DRAM (Hitachi)
  • HM4864-3 - 65536 x 1-Bit DRAM (Hitachi)
  • HM4864P-2 - 65536 x 1-Bit DRAM (Hitachi)
  • HM4864P-3 - 65536 x 1-Bit DRAM (Hitachi)
Other Datasheets by H&M Semiconductor
  • HM4853 - P-Channel Enhancement Mode Power MOSFET
  • HM4853A - P-Channel Enhancement Mode Power MOSFET
  • HM4853B - P-Channel Enhancement Mode Power MOSFET
  • HM4803 - Dual P-Channel Enhancement Mode Power MOSFET
  • HM4805 - Dual P-Channel Enhancement Mode Power MOSFET
  • HM4805A - Dual P-Channel Enhancement Mode Power MOSFET
  • HM4805B - Dual P-Channel Enhancement Mode Power MOSFET
  • HM4806B - Dual N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM4850 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4850 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ●VDS =40V,ID =5.0A RDS(ON) < 40mΩ @ VGS=10V RDS(ON) < 65mΩ @ VGS=4.
Published: |