HM4853B

P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Part number:

HM4853B

Manufacturer:

H&M Semiconductor

File Size:

480.90 KB

Description:

P-channel enhancement mode power mosfet.
HM4853B P-Channel Enhancement Mode Power MOSFET Description The HM4853B uses advanced trench techno.
The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operat.

✔ HM4853B Features

VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-2.5V
High power and current handing capability
Lead free product is acquired
Surface Mount Pa

✔ HM4853B Application

D1 G1 G2 D2 S1 S2 Schematic diagram General Features
VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.5V

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HM4853B P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

Datasheet Details

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✔ HM4853B Features

✔ HM4853B Application

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