HM4963 Datasheet, Mosfet, H&M Semiconductor

HM4963 Features

• Mosfet
• VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V D1 G1 G2 D2 S1 S2 Schematic diagram HM4963
• High power and current handing capability

PDF File Details

Part number:

HM4963

Manufacturer:

H&M Semiconductor

File Size:

633.20kb

Download:

📄 Datasheet

Description:

Dual p-channel enhancement mode power mosfet. The HM4963 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2

HM4963 Application

• Applications General Features
• VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V D1 G1 G2 D2 S1 S2 Schematic d

TAGS

HM4963

H&M Semiconductor

📁 Related Datasheet

HM491C - PFM boost DC-DC converter (H&M Semiconductor)
.

HM4922 - 20V Full-Bridge of MOSFET (H&M Semiconductor)
20V Full-Bridge of MOSFET Description 7KH+0 XVHVDGYDQFHGWUHQFKWHFKQRORJ\WR SURYLGH H[FHOOHQW 5'621 DQG ORZ JDWH FKDUJH  7KH FRPS.

HM4953 - Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM4953 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953 uses advanced trench technology to provide excellent RDS(ON), low gate ch.

HM4953A - Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM4953A Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953A uses advanced trench technology to provide excellent RDS(ON), low gate .

HM4953B - Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate .

HM4953C - Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM4953C Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953C uses advanced trench technology to provide excellent RDS(ON), low gate .

HM4953D - P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
Shenzhen H&M Semiconductor Co.Ltd http：//.hmsemi. Shenzhen H&M Semiconductor Co.Ltd http：//.hmsemi. Shenzhen H&M Semiconductor Co.Ltd ht.

HM4-6514-B - 1024 x 4 CMOS RAM (Intersil Corporation)
HM-6514 March 1997 1024 x 4 CMOS RAM Description The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The.

HM4-6516-9 - 2K x 8 CMOS RAM (Intersil Corporation)
HM-6516 March 1997 2K x 8 CMOS RAM Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved .

HM4-65162-9 - 2K x 8 Asynchronous CMOS Static RAM (Intersil Corporation)
HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using th.