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HM530 Datasheet - H&M Semiconductor

HM530 N-Channel Enhancement Mode Power MOSFET

HM530 Features

* VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)

* High density cell design for ultra low Rdson

* Fully characterized Avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technology

HM530-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM530

Manufacturer:

H&M Semiconductor

File Size:

350.40 KB

Description:

N-channel enhancement mode power mosfet.

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HM530 HM530 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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