HM530 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

+0 N-Channel Enhancement Mode Power MOSFET .
The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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HM530 Datasheet Preview — Preview of HM530 PDF

Datasheet Specifications

Part number: HM530
Manufacturer: H&M Semiconductor
File Size: 350.40 KB
Datasheet: HM530-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology

HM530 Distributors

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HM530 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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