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HM830 - 500V N-Channel MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM830
Manufacturer	H&M Semiconductor
File Size	324.38 KB
Description	500V N-Channel MOSFET
Datasheet	HM830-HMSemiconductor.pdf

HM830 Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

5.0A, 500V, RDS(on) = 1.50Ω @VGS = 10 V.
Low gate charge ( typical 20nC).
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Si.

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Published: Jun 30, 2025 |