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HM830 Datasheet - H&M Semiconductor

HM830 - 500V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices ar

HM830 Features

* 5.0A, 500V, RDS(on) = 1.50Ω @VGS = 10 V

* Low gate charge ( typical 20nC)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings TC = 25°Cunless otherwis

HM830-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM830

Manufacturer:

H&M Semiconductor

File Size:

324.38 KB

Description:

500v n-channel mosfet.

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