HM830F, HM830 Datasheet - H&M Semiconductor

HM830F 500V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

HM830F Features

* 5.0A, 500V, RDS(on) = 1.50Ω @VGS = 10 V

* Low gate charge ( typical 20nC)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings TC = 25°Cunless otherwis

HM830-HMSemiconductor.pdf

HM830F Datasheet Preview — This datasheet PDF includes multiple part numbers: HM830F, HM830. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HM830F, HM830

Manufacturer:

H&M Semiconductor

File Size:

324.38 KB

Description:

500v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: HM830F, HM830.
Please refer to the document for exact specifications by model.

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TAGS

HM830F HM830 500V N-Channel MOSFET H&M Semiconductor

HM830F Distributor