This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices ar
HM830F Features
* 5.0A, 500V, RDS(on) = 1.50Ω @VGS = 10 V
* Low gate charge ( typical 20nC)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability {D GDS TO-220 GD S TO-220F
* ◀▲ {G
* {S Absolute Maximum Ratings TC = 25°Cunless otherwis
Datasheet Details
HM830F, HM830
H&M Semiconductor
324.38 KB
500v n-channel mosfet.
This datasheet PDF includes multiple part numbers: HM830F, HM830.
Please refer to the document for exact specifications by model.
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