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HM830F, HM830 - 500V N-Channel MOSFET

H&M Semiconductor

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HM830F Datasheet Preview — This datasheet PDF includes multiple part numbers: HM830F, HM830. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	HM830F, HM830
Manufacturer	H&M Semiconductor
File Size	324.38 KB
Description	500V N-Channel MOSFET
Datasheet	HM830-HMSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HM830F, HM830. Please refer to the document for exact specifications by model.

HM830F Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

5.0A, 500V, RDS(on) = 1.50Ω @VGS = 10 V.
Low gate charge ( typical 20nC).
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Si.

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Published: Jun 30, 2025 |