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HMM165N120T4 - Power MOSFET

Datasheet Summary

Features

  • High-Speed Switching.
  • Low switching losses.
  • High blocking voltage with low on-resistance.
  • Temperature-Independent Switching Behavior.

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Datasheet preview – HMM165N120T4

Datasheet Details

Part number HMM165N120T4
Manufacturer H&M Semiconductor
File Size 1.73 MB
Description Power MOSFET
Datasheet download datasheet HMM165N120T4 Datasheet
Additional preview pages of the HMM165N120T4 datasheet.

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Full PDF Text Transcription

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Type Package HMM165N120T4 TO247-4L VDS IDS （Tc=25℃,Rth(j-c,max)） RDS(ON),typ (VGS=18V,ID=100A,Tj=25℃) Tj,max 1200V 150A 13mΩ 175℃ Features  High-Speed Switching  Low switching losses  High blocking voltage with low on-resistance  Temperature-Independent Switching Behavior Applications  PV string inverters  Solar power optimizer  Switch mode power supplies  Online UPS/Industrial UPS  High Voltage DC/DC Converters +0017  Outline  Inner Circuit Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol Parameter Conditions VDS,max VGS,max VGSop ID ID(pulse) PD Tj,Tstg TL Drain Source Voltage VGS=0V,ID=100μA Gate Source Voltage Absolute Maximum Values Gate Source Voltage Recommended Operational Values Continuous Drain Current VGS=18V,TC=25℃ VGS=18V,TC=1
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