HMM65N120T Datasheet - H&M Semiconductor

HMM65N120T Silicon Carbide Power MOSFET

HMM65N120T Features

* 3rd generation SiC MOSFET technology

* High blocking voltage with low on-resistance

* High-speed switching with low capacitances

* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits

* Reduce switching

Datasheet Details

HMM65N120T

H&M Semiconductor

874.52 KB

Silicon carbide power mosfet.

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