HMM65N120T Silicon Carbide Power MOSFET

H&M Semiconductor

Description

HMM65N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee .

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Datasheet Specifications

Part number: HMM65N120T
Manufacturer: H&M Semiconductor
File Size: 874.52 KB
Datasheet: HMM65N120T-HMSemiconductor.pdf
Description: Silicon Carbide Power MOSFET

Features

* 3rd generation SiC MOSFET technology
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits
* Reduce switching

Applications

* Solar inverters
* EV motor drive
* High voltage DC/DC converters
* Switched mode power supplies VD S 12 00 V ID @ 25˚C 63 A RDS(on) 32 mΩ TO-247-3 Package Part Number HMM65N120T Package TO 247-3 Marking HMM65N120T XXXX Maximum Ratings (TC = 25 ˚C un

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HMM65N120T Silicon Carbide Power MOSFET H&M Semiconductor

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