HMM35N120T Silicon Carbide Power MOSFET

H&M Semiconductor

Description

HMM35N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee HMM35N120T Silicon Carbide Power MOSFET N-Channel Enhancem.

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Datasheet Specifications

Part number: HMM35N120T
Manufacturer: H&M Semiconductor
File Size: 1.23 MB
Datasheet: HMM35N120T-HMSemiconductor.pdf
Description: Silicon Carbide Power MOSFET

Features

* SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher system efficiency
* Red

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch Mode Power Supplies Ordering Part Number HMM35N120T HMM35N120T-A Package Marking TO 247-3 HMM35N120T XXXX TO 247-3 HMM35N120T-A XXXX TJ , Tstg Range -55 - 150 ˚C -40 - 175 ˚C Maxi

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HMM35N120T Silicon Carbide Power MOSFET H&M Semiconductor

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