HMN10N65D Datasheet - H&M Semiconductor

HMN10N65D 650V GaN Enhancement-mode Power Transistor

HMN10N65D Features

* Enhancement-mode transistor - normally-OFF power switch

* Ultra-high switching frequency

* No reverse-recovery charge

* Low gate charge, low output charge

* Qualified for industrial applications according to JEDEC Standards

* ESD safeguard

Datasheet Details

HMN10N65D

H&M Semiconductor

4.39 MB

650v gan enhancement-mode power transistor.

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