HMN11N65D Datasheet - H&M Semiconductor

HMN11N65D, 650V GaN Power Transistor

.344 * 650V GaN Power Transistor (FET) .

Features

* Easy to use, compatible with standard gate drivers
* Superior reliability with BVDSS over 1500V
* Excellent Qg x RDS(on) figure of merit (FOM)
* Low Qrr, no free-wheeling diode required
* Low switching loss
* RoHS compliant and Halogen-free Product

Applications

* High efficiency power supplies
* High efficiency USB PD adapters
* Other consumer electronics S S D G Packaging Part Number HMN11N65D Package DFN 8 x 8 Packaging Tape and Reel Base QTY 2500 Maximum ratings, at TC=25 °C, unless otherwise specified Symbol Parameter L

HMN11N65D-HMSemiconductor.pdf