HMN10N65Q 650V GaN Enhancement-mode Power Transistor

H&M Semiconductor

Description

HMN10N65Q HMN10N65Q 650V GaN Enhancement-mode Power Transistor General .
650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 5 mm × 6 mm size Features. Enhancement-mode tra.

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Datasheet Specifications

Part number: HMN10N65Q
Manufacturer: H&M Semiconductor
File Size: 3.92 MB
Datasheet: HMN10N65Q-HMSemiconductor.pdf
Description: 650V GaN Enhancement-mode Power Transistor

Features

* Enhancement-mode transistor - normally-OFF power switch
* Ultra-high switching frequency
* No reverse-recovery charge
* Low gate charge, low output charge

Applications

* according to JEDEC Standards
* ESD safeguard
* RoHS, Pb-free, REACH-compliant Applications
* AC-DC converters
* DC-DC converters
* Totem pole PFC
* Fast battery charging
* High-density power conversion
* High-efficiency power conversio

HMN10N65Q Distributors

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HMN10N65Q 650V GaN Enhancement-mode Power Transistor H&M Semiconductor

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