HMS125N10D N-Channel Super Trench II Power MOSFET

H&M Semiconductor

Description

HMS125N10D N-Channel Super Trench II Power MOSFET .
The HMS125N10D uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS125N10D
Manufacturer: H&M Semiconductor
File Size: 518.23 KB
Datasheet: HMS125N10D-HMSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =100V,ID =125A RDS(ON)=3.8mΩ (typical) @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Pack

HMS125N10D Distributors

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HMS125N10D N-Channel Super Trench Power MOSFET H&M Semiconductor

H&M Semiconductor HMS125N10D-like datasheet