HMS135N10 N-Channel Super Trench II Power MOSFET

H&M Semiconductor

Description

HMS135N10, HMS135N10D N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS135N10
Manufacturer: H&M Semiconductor
File Size: 796.70 KB
Datasheet: HMS135N10-HMSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

Features

* VDS =100V,ID =135A RDS(ON)=3.4mΩ , typical @ VGS=10VID=1A RDS(ON)=3.9mΩ , typical @ VGS=10V ID=20A
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220

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HMS135N10 N-Channel Super Trench Power MOSFET H&M Semiconductor

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