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HMS135N10G, HMS135N10K - N-Channel Super Trench II Power MOSFET

HMS135N10G Description

HMS135N10K, HMS135N10G N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

HMS135N10G Features

* VDS =100V,ID =135A RDS(ON)=3.4mΩ , typical @ VGS=10V ID=1A RDS(ON)=3.9mΩ , typical @ VGS=10V ID=20A
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-252

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMS135N10G, HMS135N10K. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMS135N10G, HMS135N10K
Manufacturer
H&M Semiconductor
File Size
1.30 MB
Datasheet
HMS135N10K-HMSemiconductor.pdf
Description
N-Channel Super Trench II Power MOSFET
Note
This datasheet PDF includes multiple part numbers: HMS135N10G, HMS135N10K.
Please refer to the document for exact specifications by model.

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N-Channel Super Trench Power MOSFET H&M Semiconductor
H&M Semiconductor HMS135N10G-like datasheet